Gallium molybdenum selenide (Ga₁Mo₄Se₈) is a layered transition metal chalcogenide semiconductor compound that combines elements from Group 13 (gallium) with molybdenum and selenium to form a mixed-valence structure. This material is primarily of research and development interest rather than established commercial production, being investigated for optoelectronic and energy storage applications where its layered crystal structure and tunable electronic properties offer potential advantages over conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9683 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6010 | eV/atom | — |