Ga₁Mo₄S₈ is a layered semiconductor compound combining gallium, molybdenum, and sulfur in a stoichiometric ratio, belonging to the family of transition metal chalcogenides. This material is primarily of research interest for next-generation optoelectronic and electronic devices, where its layered crystalline structure and semiconductor properties offer potential advantages in applications requiring high carrier mobility, tunable bandgap, or heterostructure integration—making it particularly notable for potential use in flexible electronics, photovoltaics, and 2D device engineering where alternatives like traditional silicon or bulk MoS₂ may have limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 96.23 | GPa | — | ||
Shear Modulus(G) | 42.14 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.238 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8800 | eV/atom | — |