Ga1 Bi1

semiconductor

· Ga1 Bi1

GaBi (gallium bismuth) is a compound semiconductor belonging to the III-V semiconductor family, formed from gallium and bismuth elements. This material is primarily of research interest for optoelectronic and thermoelectric applications, where its narrow bandgap and unique electronic properties could enable infrared detectors, laser diodes, and high-efficiency thermoelectric devices operating in specialized temperature ranges. GaBi remains largely experimental compared to mature III-V semiconductors like GaAs and InP, but represents an emerging platform for applications requiring extended infrared wavelength coverage and improved thermal-to-electric conversion efficiency.

infrared detectorsmid-infrared optoelectronicsthermoelectric devicessemiconductor researchnarrow-bandgap applicationsadvanced photonics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.02570	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.02500	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga1 Bi1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control