Ga1 Bi1 O3

semiconductor

· Ga1 Bi1 O3

Gallium bismuth oxide (GaₙBiₘO₃) is an emerging ternary oxide semiconductor compound combining gallium and bismuth elements, representing an experimental material primarily under research investigation rather than established commercial production. This material belongs to the family of complex oxides and is being explored for photocatalytic applications, visible-light absorption, and potential optoelectronic devices due to the bandgap engineering benefits of bismuth incorporation. Research into gallium-bismuth oxide systems is driven by their theoretical potential for solar-driven photocatalysis, gas sensing, and next-generation semiconductor devices where conventional materials reach performance limits.

photocatalytic water treatmentsolar energy conversionvisible-light sensorsresearch optoelectronicsenvironmental remediation catalystsnext-generation semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	26,406.6	ksi	—
Shear Modulus(G)	13,833.7	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.353	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.506	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga1 Bi1 O3

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control