Ga1 B3 N4

semiconductor

· Ga1 B3 N4

Ga₁B₃N₄ is an experimental wide-bandgap semiconductor compound combining gallium, boron, and nitrogen—chemical families well-established in high-performance electronics. This ternary nitride falls within the research space of advanced semiconductors for extreme-environment and high-power applications, building on the success of binary GaN and BN materials. Engineers investigating this material would be exploring next-generation device platforms where enhanced thermal stability, electrical performance, or mechanical resilience beyond conventional binary nitrides could provide competitive advantages in demanding applications.

High-temperature electronicsWide-bandgap semiconductorsPower device researchThermal management substratesExtreme-environment sensorsMaterials research and development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	305.6	GPa	—
Shear Modulus(G)	238.5	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.976	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.8010	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga1 B3 N4

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control