Ga1 B1 N2

semiconductor

· Ga1 B1 N2

Gallium nitride (GaN) is a wide-bandgap semiconductor compound that forms the foundation of high-performance electronic and optoelectronic devices. It is widely deployed in power electronics (switching supplies, inverters, RF amplifiers), high-brightness light-emitting diodes (LEDs), and next-generation wireless infrastructure due to its ability to operate at high voltages, frequencies, and temperatures with superior efficiency compared to silicon-based alternatives.

power electronics and switching suppliesRF and microwave amplifiersLED lighting and displays5G/6G wireless infrastructureelectric vehicle power managementhigh-temperature and high-frequency circuits

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	37,110.4	ksi	—
Shear Modulus(G)	26,338.9	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.353	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.6090	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga1 B1 N2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control