Ga₁.₉₅Cu₀.₀₅Se₂.₉₅ is a copper-doped gallium selenide compound semiconductor, a variant of the II-VI semiconductor family engineered through controlled copper substitution to modify electronic and optical properties. This is a research-oriented material rather than a commercial standard, developed to explore how transition metal doping affects carrier dynamics, band structure, and photonic response in selenide-based semiconductors. The copper doping strategy is typically employed to tune bandgap, enhance photocatalytic activity, or improve carrier transport for potential photovoltaic, optoelectronic, or radiation detection applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.960 | eV | — |