Ga1.8Cu0.2S2.8

semiconductor

· Ga1.8Cu0.2S2.8

Ga₁.₈Cu₀.₂S₂.₈ is a copper-doped gallium sulfide semiconductor compound, representing a variant of the III-VI semiconductor family with controlled dopant incorporation. This material is primarily investigated in research contexts for optoelectronic and photovoltaic applications, where the copper substitution modulates electronic band structure and defect characteristics compared to undoped gallium sulfide, making it relevant for tuning optical absorption and carrier transport in thin-film device architectures.

photovoltaic researchoptoelectronic semiconductorsthin-film solar cellsnon-linear optical deviceswide band gap engineeringsemiconductor doping studies

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.650	eV	—

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Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga1.8Cu0.2S2.8

Electrical Properties

Regulatory Screening

Environmental

Export Control