Ga1.1Cu0.9Se2.1

semiconductor

· Ga1.1Cu0.9Se2.1

Ga₁.₁Cu₀.₉Se₂.₁ is a quaternary semiconductor compound based on the copper gallium diselenide (CuGaSe₂) family, with slight copper deficiency and gallium excess. This material exists primarily in research and development contexts as a candidate for thin-film photovoltaic absorbers, where non-stoichiometry is intentionally engineered to modify electronic properties and crystal defect characteristics. Compared to the stoichiometric CuGaSe₂ baseline, composition-tuned variants like this one are investigated to improve photoelectric efficiency, reduce recombination losses, and enhance device stability in solar cells.

thin-film solar cellsphotovoltaic absorber layersdirect bandgap semiconductorsoptoelectronic researchcopper indium gallium selenide alternativesdefect engineering in semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.590	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga1.1Cu0.9Se2.1

Electrical Properties

Regulatory Screening

Environmental

Export Control