Ga1.05Sb0.95Te0.15

semiconductor

· Ga1.05Sb0.95Te0.15

Ga₁.₀₅Sb₀.₉₅Te₀.₁₅ is a III-V compound semiconductor alloy based on gallium antimonide with tellurium doping, engineered to modify the bandgap and carrier properties of the base GaSb material. This quaternary or pseudo-ternary composition falls within the narrow-bandgap semiconductor family, with tellurium incorporation typically serving to tune electronic properties for infrared and thermal imaging applications. The composition sits in an experimental or specialized research domain rather than mainstream production; such Te-doped GaSb variants are investigated primarily for infrared detectors, thermoelectric devices, and high-mobility transistor channels where lattice-matched epitaxy and low-temperature carrier transport are critical.

infrared detectors and thermal imagingthermoelectric cooling/power generationhigh-mobility transistorsnarrow-bandgap optoelectronicsresearch and developmentcryogenic sensor applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6800	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga1.05Sb0.95Te0.15

Electrical Properties

Regulatory Screening

Environmental

Export Control