Ga₁.₀₅Sb₀.₉₅Se₀.₁₅ is a ternary III-V semiconductor alloy combining gallium antimonide with selenium incorporation, designed to engineer the bandgap and carrier transport properties for infrared and optoelectronic applications. This composition falls within the gallium antimonide family—a mature semiconductor system used for infrared detectors and thermal imaging—but the selenium substitution is a research-level modification to tailor electronic and optical characteristics for specific wavelength ranges or device performance targets. The slight gallium over-stoichiometry (Ga₁.₀₅ vs. Ga₁.₀) and selenium alloying suggest optimization for narrow-bandgap infrared detection or thermal sensing devices where precise bandgap engineering is critical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6600 | eV | — |