Ga1.02Sb0.98Se0.06
semiconductor· Ga1.02Sb0.98Se0.06
Ga1.02Sb0.98Se0.06 is a III-V semiconductor alloy based on gallium antimonide with selenium doping, representing a narrow-bandgap compound semiconductor system. This material belongs to the gallium antimonide family and is primarily investigated for infrared optoelectronic applications where its bandgap and carrier mobility characteristics enable detection and emission in the mid-to-long wavelength infrared spectrum. The selenium incorporation modifies the electronic structure compared to binary GaSb, making it suitable for specialized sensing and thermal imaging systems where sensitivity in specific infrared windows is required.
infrared photodetectorsthermal imaging sensorsmid-wave infrared (MWIR) applicationsresearch-phase optoelectronicsspace-based remote sensinghigh-sensitivity IR imaging
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.