Ga1.01Sb0.99Te0.03
semiconductor· Ga1.01Sb0.99Te0.03
Ga₁.₀₁Sb₀.₉₉Te₀.₀₃ is a III-V compound semiconductor alloy based on gallium antimonide (GaSb) with minor tellurium doping, belonging to the narrow-bandgap semiconductor family. This material is primarily studied for infrared optoelectronic applications, particularly in the mid-infrared to far-infrared spectral range where the tellurium addition fine-tunes the bandgap. The near-stoichiometric gallium-to-antimony ratio with controlled tellurium incorporation makes it relevant for thermoelectric devices, infrared detectors, and laser applications where precise band structure engineering is required; it represents an experimental or specialized composition rather than a widely commercialized alloy.
infrared photodetectorsthermoelectric devicesmid-infrared emitters/lasersthermal imaging sensorsspace-based optoelectronicsresearch compound semiconductors
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.