Ga1.005Sb0.995Te0.015

semiconductor

· Ga1.005Sb0.995Te0.015

Ga₁.₀₀₅Sb₀.₉₉₅Te₀.₀₁₅ is a ternary III-V semiconductor alloy based on gallium antimonide (GaSb) with a small tellurium dopant addition, designed to engineer the bandgap and carrier properties of the GaSb system. This composition falls within the research and development space for infrared optoelectronics and thermal management applications, where the tellurium incorporation modifies lattice properties and electronic structure compared to undoped GaSb. The material is notable for potential use in tuning detector sensitivity and thermal emission characteristics in the mid- to long-wavelength infrared region, making it relevant to applications requiring custom bandgap engineering beyond standard binary or well-established quaternary compounds.

infrared detectorsthermal imaging sensorsbandgap engineeringoptoelectronic researchinfrared emittersspace/defense thermal systems

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6800	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga1.005Sb0.995Te0.015

Electrical Properties

Regulatory Screening

Environmental

Export Control