Ga1.001Sb0.999Te0.003

semiconductor

· Ga1.001Sb0.999Te0.003

Ga₁.₀₀₁Sb₀.₉₉₉Te₀.₀₀₃ is a III-V semiconductor alloy based on gallium antimonide with trace tellurium doping, representing a precisely engineered variant of the GaSb family. This material is primarily of research and specialized device interest, where the small tellurium incorporation is used to tune bandgap, carrier concentration, or lattice properties for infrared detection, thermal imaging sensors, or next-generation photovoltaic applications. The near-stoichiometric GaSb backbone combined with controlled Te incorporation makes it relevant in contexts requiring narrow-bandgap semiconductors with tailored carrier dynamics—applications where fine compositional control delivers performance advantages over standard binary GaSb.

infrared detectorsthermal imaging sensorsnarrow-bandgap photovoltaicsspace-qualified optoelectronicsresearch semiconductor devicescarrier-tuned epitaxial layers

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.7200	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga1.001Sb0.999Te0.003

Electrical Properties

Regulatory Screening

Environmental

Export Control