Ga1.001Sb0.999Se0.003

semiconductor

· Ga1.001Sb0.999Se0.003

Ga₁.₀₀₁Sb₀.₉₉₉Se₀.₀₀₃ is a III-V semiconductor alloy based on gallium antimonide with trace selenium doping, representing a deliberate compositional engineering of the GaSb binary system. This material is primarily of research and development interest for infrared (IR) optoelectronic applications, where the selenium incorporation modulates bandgap and electronic properties compared to undoped GaSb. The near-unity stoichiometry with minimal Se content suggests optimization for mid-to-long-wavelength IR detection or emission in specialized photonic devices, where precise alloy tuning enables performance advantages over conventional GaSb or more complex quaternary systems.

infrared detectorsthermal imaging sensorsmid-IR optoelectronicsresearch semiconductorsbandgap engineeringphotonic integrated circuits

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.7100	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga1.001Sb0.999Se0.003

Electrical Properties

Regulatory Screening

Environmental

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