Ga0.9Sb0.9Zn0.1Te0.1

semiconductor

· Ga0.9Sb0.9Zn0.1Te0.1

Ga0.9Sb0.9Zn0.1Te0.1 is a quaternary III-V semiconductor alloy combining gallium antimonide (GaSb) with zinc telluride (ZnTe) dopants, designed to tune the bandgap and carrier properties of the GaSb host material. This is a research-grade compound rather than a widely commercialized material, developed to explore intermediate bandgap semiconductors and improve optoelectronic or thermoelectric performance in specific wavelength or temperature regimes where pure GaSb is suboptimal.

infrared photodetectorsnarrow-bandgap semiconductorsthermoelectric devicesresearch optoelectronicsbandgap engineeringIII-V compound semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.000	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.9Sb0.9Zn0.1Te0.1

Electrical Properties

Regulatory Screening

Environmental

Export Control