Ga0.9Sb0.9Hg0.1Te0.1
semiconductor· Ga0.9Sb0.9Hg0.1Te0.1
Ga0.9Sb0.9Hg0.1Te0.1 is a quaternary III-V semiconductor alloy combining gallium antimonide with mercury telluride dopants, designed to engineer the bandgap and carrier transport properties for infrared and thermal applications. This material belongs to the HgCdTe family of narrow-bandgap semiconductors and is primarily investigated for mid- to long-wave infrared detection, where its tunable bandgap enables sensitivity across specific thermal windows. Engineers select this composition when standard GaSb or HgTe prove insufficient for wavelength specificity or when the mercury and tellurium additions offer improved thermal stability or detector responsivity compared to binary alternatives.
infrared photodetectorsthermal imaging sensorsmilitary/defense surveillancespace-based remote sensingresearch-phase optoelectronics
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.