Ga0.9Sb0.9Cd0.1Te0.1

semiconductor

· Ga0.9Sb0.9Cd0.1Te0.1

Ga₀.₉Sb₀.₉Cd₀.₁Te₀.₁ is a quaternary III-V semiconductor alloy combining gallium antimonide (GaSb) with cadmium telluride (CdTe) dopants, engineered to tune bandgap and carrier properties for infrared and thermal sensing applications. This is a research-phase material composition designed to optimize performance in mid-to-long-wavelength infrared detection where traditional binary GaSb or CdTe alone may fall short; the dual alloying strategy allows independent control of lattice constant and electronic structure to improve detector sensitivity, reduce noise, and extend operating temperature range compared to single-component alternatives.

infrared detectorsthermal imaging sensorsmilitary surveillance systemsmedical thermal diagnosticsresearch and developmentbandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.7800	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.9Sb0.9Cd0.1Te0.1

Electrical Properties

Regulatory Screening

Environmental

Export Control