Ga0.99Sb0.99Hg0.01Te0.01

semiconductor

· Ga0.99Sb0.99Hg0.01Te0.01

Ga0.99Sb0.99Hg0.01Te0.01 is a quaternary III-V semiconductor alloy based on gallium antimonide with minor mercury telluride additions. This material is primarily of research interest for infrared detection and thermal imaging applications, where the incorporated mercury and tellurium modify the bandgap to extend sensitivity into the mid- to long-wave infrared spectrum compared to conventional GaSb. The small dopant concentrations allow precise tuning of optoelectronic properties while maintaining the stability and processing advantages of the GaSb host lattice.

infrared detectorsthermal imaging sensorsresearch/experimental compoundbandgap engineeringoptoelectronic devicesradiometry systems

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.7200	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.99Sb0.99Hg0.01Te0.01

Electrical Properties

Regulatory Screening

Environmental

Export Control