Ga0.99Sb0.99Cd0.01Te0.01

semiconductor

· Ga0.99Sb0.99Cd0.01Te0.01

Ga0.99Sb0.99Cd0.01Te0.01 is a quaternary III-V semiconductor alloy based on gallium antimonide (GaSb) with small additions of cadmium and tellurium. This composition represents a research material designed to engineer the bandgap and lattice parameters of the GaSb binary compound, primarily for infrared optoelectronic applications where precise control of optical properties is needed. The cadmium and tellurium dopants modify the electronic structure compared to baseline GaSb, making this material attractive for tuning performance in mid-infrared to long-wavelength infrared (LWIR) detector systems and potentially for thermoelectric or thermal imaging device optimization.

infrared detectors and sensorsthermal imaging systemsbandgap engineering researchoptoelectronic device developmentmid-wavelength infrared applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.7200	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.99Sb0.99Cd0.01Te0.01

Electrical Properties

Regulatory Screening

Environmental

Export Control