Ga0.99P0.99Zn0.01Se0.01

semiconductor

· Ga0.99P0.99Zn0.01Se0.01

Ga0.99P0.99Zn0.01Se0.01 is a quaternary III-V semiconductor alloy based on gallium phosphide with small additions of zinc and selenium dopants, designed to modify the electronic and optical properties of the base GaP compound. This material is primarily of research interest for optoelectronic and photovoltaic applications where band gap engineering and defect compensation are desired; zinc acts as an acceptor dopant while selenium substitution can tune lattice parameters and optical response. The material represents experimental work in tuning wide-band-gap semiconductors for improved efficiency in LEDs, solar cells, or radiation detectors compared to undoped GaP.

optoelectronic devicessemiconductor researchband gap engineeringphotovoltaic cellslight-emitting applicationsradiation-resistant semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.240	eV	—

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Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.99P0.99Zn0.01Se0.01

Electrical Properties

Regulatory Screening

Environmental

Export Control