Ga0.99In0.01As

semiconductor

· Ga0.99In0.01As

Ga₀.₉₉In₀.₀₁As is a III-V semiconductor alloy consisting of gallium arsenide (GaAs) with 1% indium doping, forming a direct bandgap material with a bandgap near that of pure GaAs. This composition is used primarily in optoelectronic and high-frequency electronic devices where the slight indium addition provides lattice matching flexibility and modest bandgap tuning compared to undoped GaAs, enabling integration with other III-V compounds and improved device performance in specific wavelength ranges.

infrared optoelectronicshigh-speed transistorsintegrated photonicslattice-matched heterostructuressolar cells and photodetectorsresearch semiconductor compounds

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.400	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.99In0.01As

Electrical Properties

Regulatory Screening

Environmental

Export Control