Ga0.95Sb0.95Cd0.05Te0.05

semiconductor
· Ga0.95Sb0.95Cd0.05Te0.05

Ga₀.₉₅Sb₀.₉₅Cd₀.₀₅Te₀.₀₅ is a quaternary III-V semiconductor alloy based on the GaSb-CdTe system, combining gallium antimonide with cadmium telluride dopants to modify bandgap and lattice parameters. This is a specialized research-phase compound designed for infrared detection and sensing applications, where the controlled addition of cadmium and tellurium shifts the material's optical properties into the mid-wave infrared (MWIR) band relative to binary GaSb. Engineers would consider this alloy when developing high-sensitivity thermal imaging detectors, night-vision focal plane arrays, or space-based infrared spectroscopy systems where bandgap engineering and lattice matching to substrate materials are critical—though it remains largely confined to advanced research and specialized defense/aerospace applications rather than high-volume production.

infrared detectorsthermal imaging focal plane arraysMWIR sensingspace-based spectroscopyresearch-phase semiconductorsbandgap-engineered optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
—
eV——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.