Ga0.8Sb0.8Cd0.2Te0.2

semiconductor

· Ga0.8Sb0.8Cd0.2Te0.2

Ga₀.₈Sb₀.₈Cd₀.₂Te₀.₂ is a quaternary III-V semiconductor alloy combining gallium antimonide with cadmium telluride constituents, designed to engineer the bandgap and lattice properties for infrared applications. This experimental material targets the mid-to-long wavelength infrared detection range, where it offers potential advantages over binary compounds through compositional tuning of electronic and thermal properties. The alloy family is primarily of research interest for advanced infrared sensors, thermal imaging, and space-based detection systems where bandgap engineering and temperature performance are critical.

infrared detectorsthermal imaging sensorsspace instrumentationbandgap-engineered semiconductorscryogenic thermal devicesresearch/development compound

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.8000	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.8Sb0.8Cd0.2Te0.2

Electrical Properties

Regulatory Screening

Environmental

Export Control