Ga0.8In0.2As

semiconductor

· Ga0.8In0.2As

Ga₀.₈In₀.₂As is a ternary III-V semiconductor alloy composed primarily of gallium arsenide with 20% indium substitution, designed to tune the bandgap and lattice parameters for optoelectronic applications. This material is used in high-speed photodetectors, infrared emitters, and integrated photonic circuits where its intermediate bandgap and lattice characteristics between GaAs and InAs enable efficient operation in the near-infrared spectrum. The indium addition is selected to balance lattice matching with substrates, achieve specific emission wavelengths, or improve carrier transport compared to binary GaAs, making it valuable for telecommunications and sensing systems.

infrared photodetectorsoptoelectronic integrated circuitshigh-speed photoreceiverstelecom wavelength emittersheterojunction devicesspace-qualified sensors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.070	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.8In0.2As

Electrical Properties

Regulatory Screening

Environmental

Export Control