Ga0.85As0.85Zn0.15Se0.15

semiconductor

· Ga0.85As0.85Zn0.15Se0.15

Ga0.85As0.85Zn0.15Se0.15 is a quaternary III-V semiconductor alloy combining gallium arsenide with zinc selenide constituents, representing a research-level material engineered to tune the bandgap and lattice parameters of traditional GaAs. This compound is primarily explored in photonic and optoelectronic applications where precise control over band structure is needed, such as in wide-bandgap device engineering and specialized light-emitting or light-detecting systems. The zinc and selenium incorporation allows researchers to shift electronic and optical properties relative to binary GaAs, making it relevant for next-generation semiconductor devices that demand custom spectral responses or improved performance in niche operating conditions.

optoelectronic semiconductorsphotonic device engineeringbandgap-tuned light emittersresearch-phase compound semiconductorsquantum well structuresspecialty III-V heterostructures

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.470	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.85As0.85Zn0.15Se0.15

Electrical Properties

Regulatory Screening

Environmental

Export Control