Ga0.85Al0.15As

semiconductor

· Ga0.85Al0.15As

Ga₀.₈₅Al₀.₁₅As is a direct-bandgap III-V semiconductor alloy combining gallium arsenide with aluminum arsenide in a 85:15 molar ratio. This material is engineered for optoelectronic applications where the aluminum composition tunes the bandgap to intermediate wavelengths, balancing emission wavelength, carrier confinement, and lattice matching with GaAs substrates. It is widely used in high-brightness light-emitting diodes (LEDs), laser diodes, and integrated photonic circuits, where it offers superior performance over bulk GaAs in the red-to-infrared spectrum and serves as a lattice-matched window layer in heterostructure devices.

High-brightness LEDs (red spectrum)Laser diode heterostructuresOptoelectronic integrated circuitsPhotovoltaic window layersQuantum well active regionsFiber-optic communication emitters

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.600	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.85Al0.15As

Electrical Properties

Regulatory Screening

Environmental

Export Control