Ga0.7Al0.3As

semiconductor

· Ga0.7Al0.3As

Ga₀.₇Al₀.₃As is a III-V compound semiconductor alloy formed by combining gallium arsenide and aluminum arsenide in a 70:30 ratio. This direct bandgap material is engineered to deliver intermediate electronic and optical properties between its binary components, making it valuable for optoelectronic and high-frequency applications where bandgap tuning is critical. The aluminum content increases bandgap energy and lattice strain compared to pure GaAs, enabling optimization for specific wavelength ranges in the near-infrared spectrum and higher operational temperatures in devices requiring thermal stability.

laser diodes and LEDshigh-electron-mobility transistors (HEMTs)optoelectronic integrated circuitsphotovoltaic cells and concentrator systemsquantum well heterostructuresmillimeter-wave and RF electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.810	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.7Al0.3As

Electrical Properties

Regulatory Screening

Environmental

Export Control