Ga0.75As0.75Zn0.25Se0.25

semiconductor
· Ga0.75As0.75Zn0.25Se0.25

Ga0.75As0.75Zn0.25Se0.25 is a quaternary III-V semiconductor alloy combining gallium arsenide with zinc selenide components, engineered to tune the bandgap and lattice parameters for optoelectronic applications. This material belongs to the wide-bandgap semiconductor family and is primarily of research and development interest for tunable light-emitting devices, photodetectors, and high-efficiency optoelectronic systems where bandgap engineering enables wavelength customization across the visible and near-infrared spectrum. The zinc and selenium additions to the GaAs base provide lattice-matching flexibility and bandgap control that make this composition attractive for heterostructure devices where conventional binary or ternary compounds fall short.

optoelectronic heterostructurestunable light-emitting devicesinfrared photodetectorsresearch-phase semiconductorsbandgap engineering applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
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eV——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.