Ga0.6In0.4As

semiconductor

· Ga0.6In0.4As

Ga₀.₆In₀.₄As is a III-V semiconductor alloy combining gallium arsenide and indium arsenide in a 60:40 ratio, engineered to achieve an intermediate bandgap energy between its parent compounds. This material is used primarily in high-speed optoelectronic and photonic integrated circuits, particularly for infrared photodetectors, heterojunction bipolar transistors (HBTs), and quantum well devices operating in the near-to-mid infrared wavelength ranges. Its lattice-matched or near-lattice-matched properties with GaAs and InP substrates make it valuable for epitaxial growth in monolithic integrated circuits, offering superior performance over bulk InAs or GaAs alone in applications demanding both high electron mobility and wavelength tunability.

infrared photodetectorsoptoelectronic integrated circuitshigh-speed transistorsquantum well structuresheterojunction devicesfiber-optic communications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.8100	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.6In0.4As

Electrical Properties

Regulatory Screening

Environmental

Export Control