Ga₀.₆Al₀.₄P is a III-V semiconductor alloy combining gallium phosphide and aluminum phosphide in a 60:40 ratio, forming a direct bandgap material in the visible-to-near-infrared spectrum. This compound is primarily used in optoelectronic devices, particularly red and orange light-emitting diodes (LEDs) and laser diodes, where its tunable bandgap and lattice properties enable efficient photon emission. Compared to pure GaP, the aluminum incorporation increases the bandgap energy, shifting emission wavelength and improving performance in display and signaling applications where precise color control is required.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.350 | eV | — |