Ga0.65Al0.35As

semiconductor

· Ga0.65Al0.35As

Ga₀.₆₅Al₀.₃₅As is a III-V direct bandgap semiconductor alloy combining gallium arsenide and aluminum arsenide, engineered to deliver a wider bandgap than pure GaAs while maintaining good lattice matching for heterostructure devices. This material is primarily used in optoelectronic and high-frequency applications where its tunable bandgap enables efficient light emission and detection, and its superior electron transport properties support faster, lower-noise operation compared to silicon-based alternatives.

laser diodes and LEDshigh-speed integrated circuitsheterojunction bipolar transistorsphotodetectors and solar cellsmicrowave and millimeter-wave devicesresearch quantum well structures

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.000	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.65Al0.35As

Electrical Properties

Regulatory Screening

Environmental

Export Control