Ga0.58As0.58Zn0.42Se0.42

semiconductor
· Ga0.58As0.58Zn0.42Se0.42

Ga₀.₅₈As₀.₅₈Zn₀.₄₂Se₀.₄₂ is a quaternary III-V semiconductor alloy combining gallium arsenide with zinc selenide, engineered to achieve specific bandgap and lattice properties for optoelectronic applications. This compound exists primarily in research and specialized manufacturing contexts, where tuning the GaAs/ZnSe composition ratio enables optimization for light emission, detection, or high-frequency electronic devices across the visible to near-infrared spectrum. Engineers select quaternary alloys like this when binary or ternary semiconductors cannot simultaneously meet lattice-matching, bandgap energy, and thermal stability requirements—making it relevant for advanced photonics, quantum devices, and specialized RF/microwave circuits.

optoelectronic devicesquantum well structureslight-emitting diodes (LEDs)photodetectorshigh-frequency semiconductorsresearch/development materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
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eV——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.