Ga₀.₅₈As₀.₅₈Zn₀.₄₂Se₀.₄₂ is a quaternary III-V semiconductor alloy combining gallium arsenide with zinc selenide, engineered to achieve specific bandgap and lattice properties for optoelectronic applications. This compound exists primarily in research and specialized manufacturing contexts, where tuning the GaAs/ZnSe composition ratio enables optimization for light emission, detection, or high-frequency electronic devices across the visible to near-infrared spectrum. Engineers select quaternary alloys like this when binary or ternary semiconductors cannot simultaneously meet lattice-matching, bandgap energy, and thermal stability requirements—making it relevant for advanced photonics, quantum devices, and specialized RF/microwave circuits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.670 | eV | — |