Ga0.4As0.4Zn0.6Se0.6

semiconductor

· Ga0.4As0.4Zn0.6Se0.6

Ga₀.₄As₀.₄Zn₀.₆Se₀.₆ is a quaternary II-VI semiconductor alloy combining gallium arsenide and zinc selenide constituents, designed to engineer the bandgap and lattice properties for optoelectronic applications. This material is primarily a research-phase compound explored for tunable optoelectronic devices where bandgap engineering between visible and infrared wavelengths is critical; it competes with more established ternary alloys (like ZnSe or GaAs) by offering composition flexibility to match specific emission wavelengths or detector response requirements. The mixed cation-anion structure makes it particularly relevant for next-generation light-emitting devices, photodetectors, and laser applications where precise wavelength control and lattice matching to substrates is necessary.

optoelectronic bandgap engineeringvisible and near-IR light emittersphotodetectors and sensorsresearch-phase laser materialslattice-matched heterostructuresquantum well devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.800	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.4As0.4Zn0.6Se0.6

Electrical Properties

Regulatory Screening

Environmental

Export Control