Ga0.4Al0.6As

Ga₀.₄Al₀.₆As is a III-V semiconductor alloy combining gallium arsenide and aluminum arsenide in a 40:60 ratio, engineered to tune the bandgap and lattice properties between pure GaAs and AlAs. This material is used in optoelectronic and high-frequency devices where direct bandgap control is critical, particularly in heterojunction structures for laser diodes, photodetectors, and high-electron-mobility transistors (HEMTs); the aluminum content increases bandgap energy and reduces lattice mismatch compared to GaAs alone, making it valuable for quantum well layers and lattice-matched heterostructures on GaAs substrates. The alloy enables engineers to balance optical transparency, carrier confinement, and thermal stability in integrated photonic and RF circuits where precision bandgap engineering is essential.