Ga0.4Al0.6As

semiconductor
· Ga0.4Al0.6As

Ga₀.₄Al₀.₆As is a III-V semiconductor alloy combining gallium arsenide and aluminum arsenide in a 40:60 ratio, engineered to tune the bandgap and lattice properties between pure GaAs and AlAs. This material is used in optoelectronic and high-frequency devices where direct bandgap control is critical, particularly in heterojunction structures for laser diodes, photodetectors, and high-electron-mobility transistors (HEMTs); the aluminum content increases bandgap energy and reduces lattice mismatch compared to GaAs alone, making it valuable for quantum well layers and lattice-matched heterostructures on GaAs substrates. The alloy enables engineers to balance optical transparency, carrier confinement, and thermal stability in integrated photonic and RF circuits where precision bandgap engineering is essential.

semiconductor heterostructuresquantum well lasershigh-electron-mobility transistors (HEMTs)photodetectorsintegrated photonicsRF and microwave devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
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Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.