Ga0.2Al0.8P

semiconductor

· Ga0.2Al0.8P

Ga₀.₂Al₀.₈P is a III-V semiconductor alloy combining gallium phosphide and aluminum phosphide in a 20:80 molar ratio, belonging to the direct-bandgap compound semiconductor family. This material is primarily investigated for optoelectronic and high-frequency electronic applications where the aluminum content increases bandgap energy and lattice constant tunability compared to pure GaP. The alloy is notable in research contexts for UV-to-visible light emission, high-temperature device operation, and integrated photonic circuits, though commercial deployment remains limited compared to GaAs or GaN alternatives.

ultraviolet LEDshigh-temperature electronicsintegrated photonicsresearch optoelectronicssemiconductor heterostructuresbandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.430	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.2Al0.8P

Electrical Properties

Regulatory Screening

Environmental

Export Control