Ga0.2Al0.8P
semiconductor· Ga0.2Al0.8P
Ga₀.₂Al₀.₈P is a III-V semiconductor alloy combining gallium phosphide and aluminum phosphide in a 20:80 molar ratio, belonging to the direct-bandgap compound semiconductor family. This material is primarily investigated for optoelectronic and high-frequency electronic applications where the aluminum content increases bandgap energy and lattice constant tunability compared to pure GaP. The alloy is notable in research contexts for UV-to-visible light emission, high-temperature device operation, and integrated photonic circuits, though commercial deployment remains limited compared to GaAs or GaN alternatives.
ultraviolet LEDshigh-temperature electronicsintegrated photonicsresearch optoelectronicssemiconductor heterostructuresbandgap engineering
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
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