Ga0.28In0.72As

semiconductor

· Ga0.28In0.72As

Ga₀.₂₈In₀.₇₂As is a III-V compound semiconductor alloy formed by combining gallium arsenide (GaAs) and indium arsenide (InAs) in a specific composition ratio. This material is engineered to achieve a bandgap and lattice parameter intermediate between its parent compounds, making it valuable for optoelectronic and high-frequency electronic devices that require tailored energy and structural properties. This alloy is primarily used in infrared photodetectors, fiber optic communications, and high-electron-mobility transistors (HEMTs) where its bandgap and carrier transport properties are optimized for specific wavelength ranges or high-speed performance. Compared to binary GaAs or InAs, the Ga₀.₂₈In₀.₇₂As composition enables engineers to achieve lattice matching with InP substrates and precisely tune optical response in the near- to mid-infrared spectrum, making it especially important in thermal imaging, space-qualified detectors, and millimeter-wave integrated circuits.

infrared photodetectorsfiber optic communicationshigh-electron-mobility transistors (HEMTs)thermal imaging sensorsmillimeter-wave electronicsspace and defense optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.5500	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.28In0.72As

Electrical Properties

Regulatory Screening

Environmental

Export Control