Ga0.25Al0.75As

semiconductor

· Ga0.25Al0.75As

Ga₀.₂₅Al₀.₇₅As is a III-V semiconductor alloy combining gallium arsenide with aluminum arsenide, engineered for direct bandgap control and optical properties intermediate between its constituent compounds. This material is primarily used in optoelectronic devices and high-speed electronics, where its bandgap energy and heterostructure compatibility make it valuable for quantum well lasers, LEDs, and photodetectors operating in the visible to near-infrared spectrum. The aluminum composition tunes electronic and optical characteristics compared to pure GaAs, making it particularly suited for lattice-matched heterostructure engineering and integrated photonic circuits where bandgap engineering is critical.

quantum well lasersvisible/near-IR LEDsphotodetectors and photodiodesintegrated photonicshigh-electron-mobility transistors (HEMTs)optical modulators

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.420	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.25Al0.75As

Electrical Properties

Regulatory Screening

Environmental

Export Control