Ga0.04Te1Pb0.96

semiconductor

· Ga0.04Te1Pb0.96

Ga₀.₀₄Te₁Pb₀.₉₆ is a narrow-bandgap semiconductor alloy composed primarily of lead telluride with a small gallium dopant, belonging to the IV-VI narrow-gap semiconductor family. This material is of primary interest in infrared detection and thermal imaging applications, where its bandgap and carrier properties enable sensitive operation in the mid- to far-infrared spectrum. It represents a research-level composition within the lead telluride alloy system, typically studied for optimizing carrier concentration and photoresponse characteristics in niche sensing and spectroscopic instruments.

infrared photodetectorsthermal imaging sensorsspectroscopic instrumentationlow-temperature radiation detectionresearch semiconductor devicesmid-IR sensing applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3700	eV	—

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Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga0.04Te1Pb0.96

Electrical Properties

Regulatory Screening

Environmental

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