Ga0.01As0.01Zn0.99Se0.99

semiconductor
· Ga0.01As0.01Zn0.99Se0.99

Ga0.01As0.01Zn0.99Se0.99 is a heavily zinc selenide-based II-VI semiconductor alloy with trace gallium and arsenic dopants, designed to modify the bandgap and electronic properties of the ZnSe host lattice. This is primarily a research and development material rather than a commercial commodity, investigated for optoelectronic devices where tailored bandgap energy and carrier transport are needed. The small gallium and arsenic additions enable tuning of optical and electrical characteristics compared to undoped ZnSe, making it relevant for blue/UV light-emitting devices, photodetectors, and high-temperature electronic applications where wide-bandgap semiconductors offer advantages over conventional III-V alternatives.

blue light-emitting diodes (LEDs)UV photodetectorshigh-temperature electronicsoptical window coatingsresearch-grade optoelectronicswide-bandgap semiconductor development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
—
eV——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.