FeP4 is an iron phosphide semiconductor compound that represents an emerging class of phosphide materials being investigated for optoelectronic and energy conversion applications. While not yet widely commercialized, phosphide semiconductors like FeP4 are of significant research interest as potential alternatives to traditional III-V semiconductors, particularly for photocatalysis, photoelectrochemistry, and next-generation photovoltaic devices where earth-abundant iron-based compounds could reduce material costs and supply chain constraints.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 140.6 | GPa | — | ||
| ↳ | 135.6 | GPa | — | ||
Poisson's Ratio(ν) | 0.1600 | - | — | ||
Shear Modulus(G)2 entries | 113.9 | GPa | — | ||
| ↳ | 121.8 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.046 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.3200 | eV | — | ||
| ↳ | 0.8900 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 23.67 | - | — | ||
| ↳ | 29.25 | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Piezoelectric Modulus(eij)2 entries | 0.04195 | C/m² | — | ||
| ↳ | 0.2225 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -251.6 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00130 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3864 | eV/atom | — |