FeGaN3 is an experimental iron-gallium nitride compound combining ferromagnetic iron with the semiconductor properties of gallium nitride, representing an emerging class of hybrid magnetic-semiconducting materials. This material family is primarily in research and development phases, being investigated for next-generation spintronic devices, magnetic sensors, and heterostructure applications where integrated magnetic and electronic functionality is advantageous over conventional separate components.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 2.460 | eV/atom | — |