FeAsSe

semiconductor
· FeAsSe

FeAsSe is an iron-based chalcogenide semiconductor compound combining iron, arsenic, and selenium. This material belongs to the family of pnictide-chalcogenide semiconductors currently under investigation for optoelectronic and thermoelectric applications, where its narrow bandgap and carrier transport properties make it a candidate for infrared detection and thermal energy conversion devices.

infrared detectorsthermoelectric coolingresearch semiconductorsoptoelectronic devicesthermal energy conversion

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Density(ρ)
0.2595
lb/in³
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Band Gap(Eg)2 entries
0.6000
eV
0.4400
eV
Magnetic Moment(μB)
0.000
µB
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Energy Above Hull(ΔEhull)
0.000
eV/atom
Formation Energy(ΔHf)
-0.3489
eV/atom
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.
FeAsSe — Properties & Data | MatWorld