FeAsSe

semiconductor

· FeAsSe

FeAsSe is an iron-based chalcogenide semiconductor compound combining iron, arsenic, and selenium. This material belongs to the family of pnictide-chalcogenide semiconductors currently under investigation for optoelectronic and thermoelectric applications, where its narrow bandgap and carrier transport properties make it a candidate for infrared detection and thermal energy conversion devices.

infrared detectorsthermoelectric coolingresearch semiconductorsoptoelectronic devicesthermal energy conversion

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	7.183	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	0.6000	eV	—
↳	0.4400	eV	—
Magnetic Moment(μB)	0.000	µB	—

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	—
Formation Energy(ΔHf)	-0.3489	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

FeAsSe

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control