Fe₄As₄S₄ is a quaternary semiconductor compound combining iron, arsenic, and sulfur in a layered crystalline structure, belonging to the family of metal chalcogenide semiconductors. This material remains primarily in the research and development phase, studied for its electronic and optical properties as a potential candidate for photovoltaic applications, thermoelectric devices, and optoelectronic components where earth-abundant alternatives to conventional semiconductors are sought. Its mixed-metal composition offers tunable band gap and crystal structure characteristics compared to binary or ternary semiconductors, making it of interest in materials science for exploring new semiconductor chemistries.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00400 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5150 | eV/atom | — |