Fe2Ge2Er1 is an intermetallic semiconductor compound combining iron, germanium, and erbium elements. This is a research-phase material primarily explored for potential thermoelectric and magnetic semiconductor applications, where the rare-earth erbium addition modifies electronic and thermal transport properties compared to simpler iron-germanium binaries. While not yet established in mainstream industrial production, materials in this family are investigated for next-generation energy conversion devices and specialized solid-state electronic components where rare-earth doping can engineer band structure and carrier behavior.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 19,244.9 | ksi | — | ||
Shear Modulus(G) | 8,512.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01330 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4740 | eV/atom | — |