Fe₂Bi₂As₂O₂ is an iron-bismuth-arsenic oxide semiconductor compound, representing an experimental mixed-metal oxide system with potential for novel electronic and optoelectronic applications. This material belongs to the broader class of multinary oxide semiconductors under research for photovoltaic, thermoelectric, and spintronic device integration. While not yet established in high-volume commercial production, compounds in this chemical family are investigated for their tunable bandgap, potential ferrimagnetic properties, and integration into thin-film heterostructures where bismuth and arsenic-containing phases offer alternative pathways to conventional silicon or III-V semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 14,129.9 | ksi | — | ||
Shear Modulus(G) | 5,684.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.03190 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5510 | eV/atom | — |